SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/chemical vapor deposition process at 550 °C. An electron mobility of 40 000 cm2/V s in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.