论文信息 - Bias-stress induced instability of organic thin film transistors

Bias-stress induced instability of organic thin film transistors

We have investigated the stability of polythienylene vinylene field-effect transistors under gate bias stress. On time scales up to 1000 s and temperatures up to 140 °C, we only observe reversible charge relaxation effects and no degradation. We show the time dependence of the threshold voltage shift at different temperatures. Furthermore, we discuss the influence of water and oxygen on the relaxation process.

[1] H. Sirringhaus,et al. Integrated optoelectronic devices based on conjugated polymers , 1998, Science.

[2] Gilles Horowitz,et al. Organic Field‐Effect Transistors , 1998 .

[3] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[4] Marshall,et al. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon. , 1989, Physical review. B, Condensed matter.

[5] Thomas N. Jackson,et al. Temperature-independent transport in high-mobility pentacene transistors , 1998 .

[6] Jerzy Kanicki,et al. Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors , 1993 .

[7] Henrique L. Gomes,et al. Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene) , 1991 .

[8] G. Fortunato,et al. Dispersive charge injection model for hydrogenated amorphous silicon/amorphous silicon dioxide thin‐film transistor instability , 1991 .

[9] M. Powell,et al. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors , 1983 .