Temperature-dependent delay time in GaAs high-power high-speed photoconductive switching devices

Temperature-dependent delay time between the beginning of optical illumination and the onset of switching in the transient response of semi-insulating GaAs high-power, high-speed photoconductive switching devices is studied in this letter. The temperature-dependent electroabsorption caused by absorption edge shifting due to bandgap narrowing is found to be responsible for the experimentally observed temperature-dependence in delay time. Our analysis shows delay time has little dependence on temperature when photon energy is larger than band gap, but depends strongly on temperature when photon energy is smaller than band gap and the applied electric field is low.<<ETX>>

[1]  M. Dutta,et al.  Delay time in GaAs high-power high-speed photoconductive switching devices , 1993, IEEE Photonics Technology Letters.

[2]  Hongen Shen,et al.  Electroabsorption in high-power photoconductive switches , 1992, Photonics West - Lasers and Applications in Science and Engineering.

[3]  M. D. Pocha,et al.  35-kV GaAs subnanosecond photoconductive switches , 1990 .

[4]  Julius Goldhar,et al.  Photoconductive switching using polycrystalline ZnSe , 1990 .

[5]  K. Schoenbach,et al.  The lock-on effect in electron-beam controlled gallium arsenide switches , 1990, Nineteenth IEEE Symposium on Power Modulators.

[6]  W. C. Nunnally,et al.  High-power microwave generation using optically activated semiconductor switches , 1990 .

[7]  M. D. Pocha,et al.  Modeling GaAs high-voltage, subnanosecond photoconductive switches in one spatial dimension , 1990 .

[8]  K. Tharmalingam.  Optical Absorption in the Presence of a Uniform Field , 1963 .

[9]  C. M. Wolfe,et al.  Electroabsorption avalanche photodiodes , 1974 .

[10]  J. Callaway.  Optical Absorption in an Electric Field , 1963 .

[11]  D. C. Stoudt,et al.  The lock-on effect in electron-beam controlled gallium arsenide switches , 1990 .

[12]  D. C. Stoudt,et al.  The recovery behavior of semi-insulating GaAs in electron-beam-controlled switches , 1990 .

[13]  Arye Rosen,et al.  Triggering GaAs lock-on switches with laser diode arrays , 1991, Other Conferences.

[14]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[15]  Chi H. Lee.  Optical control of semiconductor closing and opening switches , 1990 .