Quietest: A methodology for selecting IDDQ test vectors

Even high stuck-at fault coverage manufacturing test programs cannot assure high quality for CMOS VLSI circuits. Measurement of quiescent power supply current (IDDQ) is a means of improving quality and reliability by detecting many defects that do not have appropriate representation in the stuck-at fault model. Since each IDDQ measurement takes significant time, a hierarchical fault analysis methodology is proposed for selecting a small subset of production test vectors for IDDQ measurements. A software system QUIETEST has been developed on the basis of this methodology. For two VLSI circuits QUIETEST selected less than 1% of production test vectors for covering all modeled faults that would have been covered by IDDQ measurement for all of the vectors. The fault models include leakage faults and weak faults for representing defects such as gate oxide shorts and certain opens.

[1]  Wojciech Maly,et al.  Built-in current testing-feasibility study , 1988, [1988] IEEE International Conference on Computer-Aided Design (ICCAD-89) Digest of Technical Papers.

[2]  J. P. Shen.  Switch-level techniques , 1987 .

[3]  Michael D. Ciletti,et al.  QUIETEST: a quiescent current testing methodology for detecting leakage faults , 1990, 1990 IEEE International Conference on Computer-Aided Design. Digest of Technical Papers.

[4]  J. M. Soden,et al.  Electrical properties and detection methods for CMOS IC defects , 1989, [1989] Proceedings of the 1st European Test Conference.

[5]  R. Keith Treece,et al.  CMOS IC stuck-open-fault electrical effects and design considerations , 1989, Proceedings. 'Meeting the Tests of Time'., International Test Conference.

[6]  Yashwant K. Malaiya,et al.  A New Fault Model and Testing Technique for CMOS Devices , 1982, International Test Conference.

[7]  Charles F. Hawkins,et al.  Electrical Characteristics and Testing Considerations for Gate Oxide Shorts in CMOS ICs , 1985, ITC.

[8]  Neil Weste,et al.  Principles of CMOS VLSI Design , 1985 .

[9]  Charles F. Hawkins,et al.  Reliability and Electrical Properties of Gate Oxide Shorts in CMOS ICs , 1986, ITC.

[10]  Weiwei Mao,et al.  Detection of undetectable faults using IDDQ testing , 1992, Proceedings International Test Conference 1992.

[11]  Tracy Larrabee,et al.  Testing for parametric faults in static CMOS circuits , 1990, Proceedings. International Test Conference 1990.

[12]  Jerry Soden,et al.  Test Considerations for Gate Oxide Shorts in CMOS ICs , 1986, IEEE Design & Test of Computers.