Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

This paper studies the amplitude of random telegraph noise (RTN) caused by a single trap in the silicon film of ultra-thin buried oxide (UTBOX) silicon-on-insulator (SOI) devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude Δ I D / I D , which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric V DS dependence of switched source and drain are observed and supported by calibrated Sentaurus simulations. It is believed the asymmetry of the V DS dependence of the switched source and drain is related to the lateral trap position along the source and drain.

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