论文信息 - Depth profiling of high energy nitrogen ions implanted in the 〈1 0 0〉, 〈1 1 0〉 and randomly oriented silicon crystals - 字舞流文

Depth profiling of high energy nitrogen ions implanted in the 〈1 0 0〉, 〈1 1 0〉 and randomly oriented silicon crystals

M. Kokkoris | A. Lagoyannis | S. Harissopulos | V. Paneta | S. Petrović | I. Telecki | M. Erić