Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, and AlGaN thickness. Remote impurity scattering was found to be the dominant mechanism when the 2DEG density is below 5 × 1012 cm−2 and dielectric/AlGaN interface charge density is above 5 × 1012 cm−2. The interfacial charge has significant effect on the mobility as the AlGaN cap layer thickness is scaled down below 5 nm.

[1]  Siddharth Rajan,et al.  Electrical properties of atomic layer deposited aluminum oxide on gallium nitride , 2011, 1109.2566.

[2]  J. H. Davies,et al.  The physics of low-dimensional semiconductors , 1997 .

[3]  T. Hashizume,et al.  Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition , 2010 .

[4]  Lester F. Eastman,et al.  High performance AIGaN/GaN power switch with HfO2 insulation , 2009 .

[5]  Yasuhiro Shimamoto,et al.  Effective electron mobility reduced by remote charge scattering in high-κ gate stacks , 2002 .

[6]  Zhen Liu,et al.  Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator , 2009 .

[7]  U. Mishra,et al.  30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[8]  James S. Speck,et al.  N-polar GaN∕AlGaN∕GaN high electron mobility transistors , 2007 .

[9]  M. Stroscio,et al.  Polar optical-phonon scattering in three- and two-dimensional electron gases , 1995 .

[10]  L. Eastman,et al.  Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT , 2009, IEEE Electron Device Letters.

[11]  E. Cartier,et al.  Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering , 2001 .

[12]  L. Eastman,et al.  Correlation Between AlGaN/GaN MISHFET Performance and $ \hbox{HfO}_{2}$ Insulation Layer Quality , 2011, IEEE Electron Device Letters.

[13]  J. Wortman,et al.  Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides , 2000 .

[14]  D. Jena,et al.  Dipole scattering in highly polar semiconductor alloys , 2004 .

[15]  Peter Kordos,et al.  Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness , 2008 .

[16]  Toshiaki Matsui,et al.  AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz , 2008 .

[17]  G. Ng,et al.  Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor , 2011 .

[18]  Dipole scattering in polarization induced III–V nitride two-dimensional electron gases , 2000, cond-mat/0004204.

[19]  P. Parikh,et al.  40-W/mm Double Field-plated GaN HEMTs , 2006, 2006 64th Device Research Conference.

[20]  D. Gregušová,et al.  AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide , 2007 .