论文信息 - Hot-electron dynamics in SiO 2 and the degradation of the Si/SiO 2 -interface - 字舞流文

Hot-electron dynamics in SiO 2 and the degradation of the Si/SiO 2 -interface

Abstract Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO 2 -interface during high-field current stress using a hot-electron-induced hydrogen-release model.

Eduard A. Cartier | D. J. DiMaria

[1] James Stasiak,et al. Trap creation in silicon dioxide produced by hot electrons , 1989 .

[2] F. Mcfeely,et al. Hot-electron dynamics in SiO2 studied by soft-x-ray-induced core-level photoemission. , 1991, Physical review. B, Condensed matter.

[3] Kirtley,et al. Theory of high-field electron transport in silicon dioxide. , 1985, Physical review. B, Condensed matter.

[4] Eduard A. Cartier,et al. Degradation and breakdown of silicon dioxide films on silicon , 1992 .

[5] S. Lai,et al. Interface trap generation in silicon dioxide when electrons are captured by trapped holes , 1983 .

[6] Eduard A. Cartier,et al. Impact ionization and positive charge formation in silicon dioxide films on silicon , 1992 .

[7] D. Arnold,et al. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon , 1993 .

[8] Rachid Bouchakour,et al. Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures , 1993 .

[9] Arnold,et al. Acoustic-phonon runaway and impact ionization by hot electrons in silicon dioxide. , 1992, Physical review. B, Condensed matter.