End user reliability assessment of 1.2–1.7 kV commercial SiC MOSFET power modules
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[1] A. Huang,et al. 22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[2] Aivars J. Lelis,et al. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs , 2015, IEEE Transactions on Electron Devices.
[3] Philippe Godignon,et al. A Survey of Wide Bandgap Power Semiconductor Devices , 2014, IEEE Transactions on Power Electronics.
[4] Tsunenobu Kimoto,et al. Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics , 2015, IEEE Transactions on Electron Devices.
[5] Frede Blaabjerg,et al. Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics , 2014, IEEE Journal of Emerging and Selected Topics in Power Electronics.
[6] J. Casady,et al. Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs , 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.
[7] Ronald Green,et al. Application of reliability test standards to SiC Power MOSFETs , 2011, 2011 International Reliability Physics Symposium.
[8] M. Shur,et al. Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures , 2009 .
[9] Juin J. Liou,et al. A review of recent MOSFET threshold voltage extraction methods , 2002, Microelectron. Reliab..
[10] Hans-Peter Nee,et al. Humidity testing of SiC power MOSFETs , 2016, 2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia).
[11] Tsunenobu Kimoto,et al. 4H-SiC bipolar junction transistors with record current gains of 257 on (0001) and 335 on (000–1) , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
[12] Lin Cheng,et al. 27 kV, 20 A 4H-SiC n-IGBTs , 2015 .
[13] D. Boroyevich,et al. A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications , 2014, IEEE Transactions on Power Electronics.
[14] Li Yang,et al. High temperature gate-bias and reverse-bias tests on SiC MOSFETs , 2013, Microelectron. Reliab..
[15] Puqi Ning,et al. High-Temperature SiC Power Module Electrical Evaluation Procedure , 2011, IEEE Transactions on Power Electronics.
[16] Nando Kaminski,et al. Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[17] Hirofumi Yamamoto,et al. Lifetime estimation of SiC MOSFETs under high temperature reverse bias test , 2016, Microelectron. Reliab..
[18] J. Suehle,et al. Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements , 2008, IEEE Transactions on Electron Devices.