论文信息 - Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60 Co irradiation

Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60 Co irradiation

Abstract Fowler-Nordheim injection and isochronal anneals for several power MUM of various manufacturers made it possible to highlight that characteristic charge trap temperatures were identical to those due to radiation with 60 Co source. Results allow us to put forward some assumptions about electrical stress use as a selection component method for radiation environment.

[1] Daniel M. Fleetwood,et al. Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides , 1996 .

[2] Marty R. Shaneyfelt,et al. Use of COTS microelectronics in radiation environments , 1999 .

[3] P. Boivin,et al. Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation , 1999 .

[4] Tso-Ping Ma,et al. Equivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection , 1988 .

[5] Alessandro Paccagnella,et al. Ionizing radiation induced leakage current on ultra-thin gate oxides , 1997 .

[6] Ninoslav Stojadinovic,et al. Analysis of CMOS transistor instabilities , 1987 .

[7] Andrew Holmes-Siedle,et al. Handbook of Radiation Effects , 1993 .

[8] M. Lenzlinger,et al. Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .

[9] T. P. Ma,et al. Ionizing radiation effects in MOS devices and circuits , 1989 .

[10] Post-stress interface trap generation induced by oxide-field stress with FN injection , 1998 .

[11] Kenneth F. Galloway,et al. Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements , 1997 .