Growth and properties of GayIn1 − yPzAs1 − x − zBix solid solutions on GaP substrates
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[1] B. M. Sinel’nikov,et al. GaxIn1 − xBiyAszSb1 − y − z/InSb and InBiyAszSb1 − y − z/InSb heterostructures grown in a temperature gradient , 2012, Inorganic Materials.
[2] V. Kuznetsov,et al. Bismuth in quaternary and quinary solid solutions based on A3B5 compounds , 2011 .
[3] M. Lunina,et al. The kinetics of the crystallization in bismuth-containing heterosystems Al-In-Sb-Bi and Ga-As-P-Bi , 2008 .
[4] L. S. Lunin,et al. Mass spectrometric study of GaInPAsSb/GaSb heterostructures , 2008 .
[5] V. V. Kuznetsov,et al. InAs based multicomponent solid solutions for thermophotovoltaic converters , 2003 .
[6] M. J. Deen,et al. Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes , 1995 .
[7] M. Ilegems,et al. The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap , 1978 .
[8] J. Escher,et al. High‐quantum‐efficiency photoemission from an InGaAsP photocathode , 1976 .
[9] V. Kuznetsov,et al. Phase equilibria in III-V quinary systems , 1998 .