Influence of N2 carrier gas on surface stoichiometry in GaN MOVPE studied by surface photoabsorption
暂无分享,去创建一个
[1] B. Jani,et al. High quality GaN grown by MOVPE , 1997 .
[2] N. Kobayashi,et al. Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption , 1997 .
[3] F. Steuber,et al. Low pressure MOVPE of GaN and GaInN/GaN heterostructures , 1997 .
[4] A. Koukitu,et al. Thermodynamic analysis of the MOVPE growth of InxGa1-xN , 1997 .
[5] Flórez,et al. Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001). , 1987, Physical review letters.