Structural properties of MBE grown Cu(In,Ga)S2 layers on Si
暂无分享,去创建一个
A. Chuvilin | U. Kaiser | U. Reislöhner | H. Metzner | T. Hahn | J. Cieślak | J. Eberhardt | W. Witthuhn | J. Kräusslich | Michael Müller
[1] G. Gobsch,et al. Epitaxial growth of CuGaS2 on Si(111) , 2002 .
[2] H. Metzner,et al. Order and disorder in epitaxially grown CuInS2 , 2001 .
[3] D. Su,et al. CuAu-type ordering in epitaxial CuInS2 films , 1998 .
[4] H. Metzner,et al. Epitaxial growth of CuInS2 on sulphur terminated Si(001) , 1998 .
[5] H. Metzner,et al. Rutherford backscattering spectroscopy of rough films: Experimental aspects , 1998 .
[6] H. Metzner,et al. Rutherford backscattering spectroscopy of rough films: Theoretical considerations , 1997 .
[7] H. Metzner,et al. Epitaxial growth of CuInS2 on sulphur terminated Si(111) , 1996 .
[8] H. Metzner,et al. Thin CuInS2 films by three-source molecular beam deposition , 1995 .
[9] Ferreira,et al. First-principles calculation of the order-disorder transition in chalcopyrite semiconductors. , 1992, Physical review. B, Condensed matter.
[10] S. Abrahams,et al. Piezoelectric nonlinear optic CuGaS2 and CuInS2 crystal structure: Sublattice distortion in AIBIIIC2VI and AIIBIVC2V type chalcopyrites , 1973 .