Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these layers improves with increasing layer thickness while their nucleation time decreases. Our results show that 4 nm is the smallest thickness of the AlN layer that allows the growth of well-aligned NWs with short nucleation time. Such an AlN buffer layer was successfully employed, together with a patterned SiOx mask, for the selective-area growth (SAG) of vertical GaN NWs. In addition, we fabricated light-emitting diodes (LEDs) from NW ensembles that were grown by means of self-organization phenomena on bare and on AlN-buffered Si substrates. A careful characterization of the optoelectronic properties of the two devices showed that the performance of NW-LEDs on bare and AlN-buffered Si is similar. Electrical conduction across the AlN buffer is facilitated by a high number of grain boundaries that were revealed by transmission electron microscopy. These results demonstrate that grainy AlN buffer layers on Si are compatible both with the SAG of GaN NWs and LED operation. Therefore, this study is a first step towards the fabrication of LEDs on Si substrates based on homogeneous NW ensembles.

[1]  James S. Speck,et al.  Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy , 2000 .

[2]  T. Gotschke,et al.  The influence of Mg doping on the nucleation of self-induced GaN nanowires , 2012 .

[3]  J. Eymery,et al.  Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications , 2013, Nanoscale Research Letters.

[4]  K. Kishino,et al.  Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy , 2008 .

[5]  V. Consonni,et al.  Physical origin of the incubation time of self-induced GaN nanowires , 2011 .

[6]  O. Bierwagen,et al.  Leakage currents at crystallites in ZrAlxOy thin films measured by conductive atomic-force microscopy , 2007 .

[7]  F. Glas.  Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires , 2006 .

[8]  Todd E. Harvey,et al.  Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy , 2010 .

[9]  Hiroto Sekiguchi,et al.  Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate , 2010 .

[10]  P. Yashar,et al.  Stabilization of Cubic AlN in Epitaxial AlN/TiN Superlattices , 1997 .

[11]  Michael N. Fairchild,et al.  Threading defect elimination in GaN nanowires , 2011 .

[12]  H. Riechert,et al.  Delayed nucleation during molecular-beam epitaxial growth of GaN observed by line-of-sight quadrupole mass spectrometry , 2002 .

[13]  Y. Arakawa,et al.  Selective-area growth of thin GaN nanowires by MOCVD , 2012 .

[14]  D. Kim,et al.  High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays , 2004 .

[15]  O Brandt,et al.  Current path in light emitting diodes based on nanowire ensembles , 2012, Nanotechnology.

[16]  K. Sabelfeld,et al.  Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy. , 2013, Nano letters.

[17]  Toma Stoica,et al.  Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays , 2011 .

[18]  B. Witzigmann,et al.  All-InGaN Phosphorless White Light Emitting Diodes: An Efficiency Estimation , 2012, Journal of Lightwave Technology.

[19]  Hiroto Sekiguchi,et al.  Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays , 2009 .

[20]  P. Gilet,et al.  GaN‐based nanowires: From nanometric‐scale characterization to light emitting diodes , 2010 .

[21]  R Armitage,et al.  Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy , 2010, Nanotechnology.

[22]  T. Schumann,et al.  Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer , 2011, Nanotechnology.

[23]  Wen-Tai Lin,et al.  Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation , 1995 .

[24]  P. Bhattacharya,et al.  Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. , 2010, Nano letters.

[25]  M. Sánchez-García,et al.  Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission , 2013, Nanotechnology.

[26]  Y. Ikuhara,et al.  Formation of cubic-AlN layer on MgO(1 0 0) substrate , 1998 .

[27]  S. Hersee,et al.  The controlled growth of GaN nanowires. , 2006, Nano letters.

[28]  A. Waag,et al.  Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells , 2010, Nanotechnology.

[29]  Hiroto Sekiguchi,et al.  Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns , 2008 .

[30]  Le Si Dang,et al.  Submicrometre resolved optical characterization of green nanowire-based light emitting diodes , 2011, Nanotechnology.

[31]  Armin Dadgar,et al.  GaN-Based Devices on Si , 2002 .

[32]  O. Brandt,et al.  Correlation between In content and emission wavelength of InxGa1−xN/GaN nanowire heterostructures , 2012, Nanotechnology.

[33]  J. Eymery,et al.  Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate , 2011 .

[34]  Elif Ertekin,et al.  Equilibrium limits of coherency in strained nanowire heterostructures , 2005 .

[35]  S. Gwo,et al.  InGaN/GaN nanorod array white light-emitting diode , 2010 .

[36]  K. Kishino,et al.  Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46 µm , 2012 .

[37]  G A Botton,et al.  p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111). , 2011, Nano letters.

[38]  H. Lüth,et al.  Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy. , 2007, Nano letters.

[39]  K. Kishino,et al.  InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate , 2004 .

[40]  A. Trampert,et al.  In situ investigation of self-induced GaN nanowire nucleation on Si , 2010 .

[41]  Abbes Tahraoui,et al.  Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires , 2014, 1410.3709.

[42]  W. Richter,et al.  Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy , 1999 .

[43]  A. Waag,et al.  GaN based nanorods for solid state lighting , 2012 .