Structural and Room‐Temperature Transport Properties of Zinc Blende and Wurtzite InAs Nanowires

In this paper, we directly correlate the microstructure and room-temperature transport behavior of individual InAs NWs. From transmission electron microscopy (TEM) studies, we distinguished between pure zinc blende (ZB) NWs and wurtzite (WZ) NWs containing stacking faults and small ZB segments. Through detailed device analysis on back-gate NW field-effect transistors (NWFETs), we found insignificant differences in the extracted transport coefficients even though the extrinsic subthreshold characteristics exhibited significantly different behavior for both types of NWs. We show with 2D transport simulations that these differences in subthreshold characteristics can be explained by the presence of polarization charges in the twinned WZ NWs, which compensate surface charges and enable full depletion of the NW channel.

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