STATIC RANDOM ACCESS MEMORY USING QUATERNARY D LATCH

In this paper, the implementation of a static random access memory cell using quaternary logic is presented. This static RAM is based on quaternary D latch. When the select line is asserted, the stored data is placed on the cell’s output. When both select and write are asserted the D latch is open and a new data bit is stored. The D latch used here is built using NMAX, NMIN and quaternary inverter circuits. A 4x4 memory array have also been designed and compared with 4x4 array of Quaternary Static CMOS memory Cell.. The spice coding is done using 0.18μm CMOS technology and verification of the design is done through HSPICE and COSMOSSCOPE Synopsis Tools. Power and delay of the circuit is analyzed. New design shows 65.28% of improvement in average power dissipation when compared to 4x4 array of Quaternary Static CMOS memory Cell and 75% improvement over binary 4X4 array at 180nm.

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