Degradation of the thermal oxide of the Si/SiO2/Al system due to vacuum ultraviolet irradiation
暂无分享,去创建一个
Andre Stesmans | P. Balk | A. Stesmans | P. Balk | J. D. Nijs | V. Afanas'ev | Valeri Afanas'ev | J. M. M. de Nijs
[1] D. Dimaria,et al. Radiation damage in silicon dioxide films exposed to reactive ion etching , 1979 .
[2] E. V. D. Drift,et al. Hydrogen induced donor‐type Si/SiO2 interface states , 1994 .
[3] Donald R. Young,et al. Electron trapping by radiation‐induced charge in MOS devices , 1976 .
[4] Arnold Reisman,et al. The distribution of radiation‐induced charged defects and neutral electron traps in SiO2, and the threshold voltage shift dependence on oxide thickness , 1990 .
[5] A. Edwards. Dissociation of H2 at silicon dangling orbitals in a-SiO2: a quantum mechanical treatment of nuclear motion☆ , 1995 .
[6] James Stasiak,et al. Trap creation in silicon dioxide produced by hot electrons , 1989 .
[7] Electron spin resonance observation of defects in device oxides damaged by soft x rays , 1987 .
[8] Donald R. Young,et al. Electron trapping in electron‐beam irradiated SiO2 , 1978 .
[9] R. A. Kushner,et al. Total dose radiation hardness of MOS devices in hermetic ceramic packages , 1988 .
[10] B. Eitan,et al. Current induced trap generation in SiO2 , 1982 .
[11] D. R. Wolters,et al. Trapping of hot electrons , 1989 .
[12] D. Dimaria,et al. Determination of insulator bulk trapped charge densities and centroids from photocurrent‐voltage charactersitcs of MOS structures , 1976 .
[13] Masakazu Shimaya,et al. Neutral electron trap generation in SiO2 by hot holes , 1990 .
[14] Hisham Z. Massoud,et al. Electron trapping in SiO2 at 295 and 77 °K , 1979 .
[15] M. Heyns,et al. Trap generation and electron detrapping in SiO2 during high‐field stressing of metal‐oxide‐semiconductor structures , 1984 .
[16] D. R. Young,et al. Identification of electron traps in thermal silicon dioxide films , 1981 .
[17] J. F. Conley,et al. Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices , 1993 .
[18] Study of hydrogen incorporation in MOS-structures after various process steps using nuclear reaction analysis (NRA) , 1993 .
[19] D. Dimaria,et al. Temperature dependence of trap creation in silicon dioxide , 1990 .
[20] T. P. Ma,et al. Ionizing radiation effects in MOS devices and circuits , 1989 .
[21] Arnold,et al. Theory of high-field electron transport and impact ionization in silicon dioxide. , 1994, Physical review. B, Condensed matter.
[22] J. Sun,et al. Deactivation of the boron acceptor in silicon by hydrogen , 1983 .
[23] A. Reisman,et al. Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators , 1991 .
[24] James H. Stathis,et al. Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen , 1993 .
[25] Y. Nissan-Cohen,et al. Trap generation and occupation dynamics in SiO2 under charge injection stress , 1986 .
[26] Lionel C. Kimerling,et al. Recombination enhanced defect reactions , 1978 .
[27] Fischetti. Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode. , 1985, Physical review. B, Condensed matter.
[28] William Eccleston,et al. Electron trap generation in thermally grown SiO2 under Fowler-Nordheim stress , 1992 .
[29] D. Young. Characterization of electron traps in SiO2 as influenced by processing parameters , 1981 .
[30] C. Magee,et al. Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors , 1984 .
[31] E. Bassous,et al. Transmission, photoconductivity, and the experimental band gap of thermally grown SiO 2 films , 1979 .
[32] Fowler,et al. Hydrogen-acceptor pairs in silicon: Pairing effect on the hydrogen vibrational frequency. , 1985, Physical review. B, Condensed matter.
[33] P. Balk,et al. SiO2 hole traps with small cross section , 1995 .
[34] D. Arnold,et al. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon , 1993 .
[35] Bruce E. Deal,et al. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers , 1979 .
[36] P. Lenahan. Electron spin resonance and instabilities in metal insulator semiconductor systems , 1993 .
[37] Tak H. Ning,et al. Electron trapping in SiO2 due to electron‐beam deposition of aluminum , 1978 .
[38] P. Balk,et al. Nature of defects in the Si‐SiO2 system generated by vacuum‐ultraviolet irradiation , 1994 .
[39] Douglas A. Buchanan,et al. Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors , 1994 .
[40] Chenming Hu,et al. Substrate hole current and oxide breakdown , 1986 .
[41] P. Balk,et al. The microscopic nature of donor-type SiSiO2 interface states , 1995 .
[42] Massimo V. Fischetti,et al. Electron heating studies in silicon dioxide: Low fields and thick films , 1986 .
[43] E. J. Friebele,et al. ESR studies of damage processes in X‐irradiated high purity a‐SiO2:OH and characterization of the formyl radical defect , 1983 .
[44] R. A. Gdula,et al. The Effects of Processing on Hot Electron Trapping in SiO2 , 1976 .
[45] Tsuneo Ajioka,et al. Electron trap center generation due to hole trapping in SiO2 under Fowler–Nordheim tunneling stress , 1987 .
[46] D. Dimaria,et al. Hole trapping in the bulk of SiO2 layers at room temperature , 1980 .
[47] Stathis,et al. Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface. , 1994, Physical review letters.
[48] C. Sah,et al. A study of oxide traps and interface states of the silicon‐silicon dioxide interface , 1980 .
[49] Chenming Hu,et al. Electron-trap generation by recombination of electrons and holes in SiO2 , 1987 .
[50] Donald R. Young,et al. Hydrogen migration under avalanche injection of electrons in Si metal‐oxide‐semiconductor capacitors , 1983 .
[51] John F. Conley,et al. Observation and electronic characterization of ‘‘new’’ E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping , 1994 .