Origin of arbitrary patterns by direct laser writing in a telluride thin film

A crystalline telluride (Te) thin film was prepared by a radio frequency magnetron controlling sputtering method. The fabrication of arbitrary patterns was achieved successfully by our home-built direct laser writing system in the prepared Te thin film. To elucidate the mechanism of pattern formation, micro X-ray diffraction, micro Raman spectra and micro reflective spectra before and after exposure were analyzed in detail. The results reveal that the occurrence of arbitrary patterns may be ascribed to the decreased grain size in the Te thin film, which can further be confirmed by the results of AFM and section images of the Te thin film. It is a simple and cost-effective method for arbitrary pattern fabrication based on the reduction of grain size in the laser writing process.

[1]  Three-step lithography to the fabrication of vertically coupled micro-ring resonators in amorphous silicon-on-insulator , 2016 .

[2]  J. Teng,et al.  Optically reconfigurable metasurfaces and photonic devices based on phase change materials , 2015, Nature Photonics.

[3]  Harish Bhaskaran,et al.  Integrated all-photonic non-volatile multi-level memory , 2015, Nature Photonics.

[4]  Zhongyi Guo,et al.  Arbitrary focusing lens by holographic metasurface , 2015 .

[5]  Munazza Zulfiqar Ali,et al.  Global transmission diagrams for evanescent waves in a nonlinear hyperbolic metamaterial , 2015 .

[6]  Jingsong Wei,et al.  Direct detection of the transient superresolution effect of nonlinear saturation absorption thin films , 2015 .

[7]  Electromagnetic chirality induced by graphene inclusions in multilayered metamaterials , 2014 .

[8]  Lirong Zheng,et al.  A study on inorganic phase-change resist Ge2Sb2(1-x)Bi2xTe5 and its mechanism. , 2014, Physical chemistry chemical physics : PCCP.

[9]  Hongtao Lin,et al.  Integrated flexible chalcogenide glass photonic devices , 2014, Nature Photonics.

[10]  S. Pleasants.  Lithography: Chalcogenide promise , 2014 .

[11]  Jingsong Wei,et al.  Chalcogenide phase-change thin films used as grayscale photolithography materials. , 2014, Optics express.

[12]  Shiuh Chao,et al.  A compact optical pickup head in blue wavelength with high horizontal stability for laser thermal lithography. , 2013, Optics express.

[13]  A. Gerbreders,et al.  Surface pattern recording in Sb2Se3 thin films , 2013 .

[14]  Chuanfei Guo,et al.  One-step fabrication of micro/nanotunnels in metal interlayers. , 2013, Nanoscale.

[15]  Ashutosh Sharma,et al.  Large area IR microlens arrays of chalcogenide glass photoresists by grayscale maskless lithography. , 2013, ACS applied materials & interfaces.

[16]  Qian Liu,et al.  Path-guided wrinkling of nanoscale metal films. , 2012, Advanced materials.

[17]  Qian Liu,et al.  Ge 2 Sb 1.5 Bi 0.5 Te 5 thin film as inorganic photoresist , 2012 .

[18]  Jingsong Wei,et al.  Focused ion beam milled pattern structures induced by laser pulse on AgInSbTe phase change films , 2012 .

[19]  Masud Mansuripur,et al.  Fabrication of phase-change Ge2Sb2Te5 nano-rings. , 2011, Optics express.

[20]  M. Madou,et al.  One-step maskless grayscale lithography for the fabrication of 3-dimensional structures in SU-8 , 2011 .

[21]  Noboru Yamada,et al.  From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials. , 2011, Nature materials.

[22]  Heon Lee,et al.  Enhanced performance of solar cells with anti-reflection layer fabricated by nano-imprint lithography , 2011 .

[23]  Hiroshi Kawai,et al.  405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material , 2009 .

[24]  Tsun Ren Jeng,et al.  Enhancing nanoscale patterning on Ge-Sb-Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography , 2009 .

[25]  C. Guo,et al.  Laser direct writing of nanoreliefs in Sn nanofilms. , 2009, Optics letters.

[26]  Saulius Juodkazis,et al.  Three-dimensional microfabrication of materials by femtosecond lasers for photonics applications , 2009 .

[27]  C. Yang,et al.  Size-dependent Raman red shifts of semiconductor nanocrystals. , 2008, The journal of physical chemistry. B.

[28]  S. Elliott,et al.  Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. , 2008, Nature materials.

[29]  C. Waits,et al.  Development of chalcogenide glass photoresists for gray scale lithography , 2006 .

[30]  Andrew A. Bettiol,et al.  ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW , 2005 .

[31]  J. Tominaga,et al.  Understanding the phase-change mechanism of rewritable optical media , 2004, Nature materials.

[32]  Weixing Yu,et al.  Single-step fabrication of continuous surface relief micro-optical elements in hybrid sol-gel glass by laser direct writing. , 2002, Optics express.

[33]  S. Hashioka,et al.  10 nm size fabrication of semiconductor substrates and metal thin lines by conventional photolithography , 2000, Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).

[34]  R. Solanki,et al.  A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin films , 1997 .

[35]  Xide Xie,et al.  Raman shifts in Si nanocrystals , 1996 .

[36]  James S. Speck,et al.  Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN , 1996 .

[37]  David K. Fork,et al.  Large Grain Creation and Destruction in Excimer Laser Crystallized Amorphous Silicon , 1993 .

[38]  G. Dresselhaus,et al.  Raman Spectra and Lattice Dynamics of Tellurium , 1971 .