Strained-InGaAsP MQW electroabsorption modulator integrated DFB laser
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The monolithic integration of a strained-InGaAsP MQW electroabsorption modulator and a DFB laser using only two-step MOVPE growth is described. The extinction ratio is 20 dB with a low-driving voltage of 1.4 V for an optical power density of 10/sup 2/ kW/cm/sup 2/. >
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