Progress and prospects of group-III nitride semiconductors

Abstract We review recent progress in the group-III nitride and related materials, and electronic and optical devices based on them. Blue and UV (e.g. ultra violet) emitters and detectors, and high temperature/high power electronics which has long been coveted are beginning to be realized either in the laboratory or in the commercial arena, due in part to the breathtaking progress made in the last few years in the art and science of GaN, InN, AlN and their salloys. With brief references to the historical aspect of the relevant developments, this review concerns itself primarily with the current status of wide bandgap gallium nitride and related semiconductors from both the materials and devices points of view. Following a discussion of the structural properties of these materials, their electrical and optical properties are described in detail. The available data on metal contacts, the properties of which are indeed very conducive for the devices mentioned, from the points of view of ohmic contacts and Schottky barriers, are elaborated on. Recent progress on processing issues such as etching are reviewed. The review then embarks on an indash;depth discussion and analysis of field effect transistors, bipolar transistors, light emitting diodes, laser and photo detectors.

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