Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices

Type-II InAs/GaSb superlattices (T2SLs), a system of multi-interacting quantum wells, was introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this material system has drawn a lot of attention especially for infrared detection. In recent years, T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process which elevated the performances of T2SL-based photo-detectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). In this paper, we will present the current status of T2SL-based photo-detectors and focal plane arrays for imaging in different infrared regions, from SWIR to VLWIR, and the future outlook of this material system.

[1]  Manijeh Razeghi,et al.  High Operability 1024×1024 Long Wavelength Infrared Focal Plane Array Base on Type‐II InAs/GaSb Superlattice , 2011 .

[2]  Manijeh Razeghi,et al.  High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices , 2011 .

[3]  Manijeh Razeghi,et al.  Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors , 2011 .

[4]  M. Razeghi,et al.  Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range , 2005 .

[5]  Manijeh Razeghi,et al.  Photovoltaic MWIR Type-II Superlattice Focal Plane Array on GaAs Substrate , 2010, IEEE Journal of Quantum Electronics.

[6]  Hooman Mohseni,et al.  Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices , 1998 .

[7]  Manijeh Razeghi,et al.  Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices , 2012 .

[8]  Meimei Z. Tidrow,et al.  The effect of doping the M-barrier in very long-wave type-II InAs /GaSb heterodiodes , 2008 .

[9]  Binh-Minh Nguyen,et al.  High Operability 1024$\,\times\,$1024 Long Wavelength Type-II Superlattice Focal Plane Array , 2012, IEEE Journal of Quantum Electronics.

[10]  Vaidya Nathan,et al.  Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes , 2007, SPIE OPTO.

[11]  Yajun Wei,et al.  Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering , 2004 .

[12]  Manijeh Razeghi,et al.  Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier , 2007 .

[13]  Manijeh Razeghi,et al.  High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices , 2010 .

[14]  J. L. Miller.  Focal Plane Arrays , 1994 .

[15]  Yajun Wei,et al.  Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm , 2007 .

[16]  Meimei Z. Tidrow,et al.  Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate , 2009 .

[17]  Manijeh Razeghi,et al.  Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate , 2009 .

[18]  Manijeh Razeghi,et al.  Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance. , 2011, Optics letters.

[19]  Manijeh Razeghi,et al.  World's first demonstration of type-II superlattice dual band 640x512 LWIR focal plane array , 2012, OPTO.

[20]  Yajun Wei,et al.  Passivation of type-II InAs∕GaSb double heterostructure , 2007 .

[21]  Vaidya Nathan,et al.  The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier , 2009, OPTO.

[22]  Manijeh Razeghi,et al.  Low irradiance background limited type-II superlattice MWIR M-barrier imager. , 2012, Optics letters.

[23]  L. Esaki,et al.  A new semiconductor superlattice , 1977 .

[24]  Manijeh Razeghi,et al.  Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes , 2011 .

[25]  Manijeh Razeghi,et al.  Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays , 2009, OPTO.

[26]  Manijeh Razeghi,et al.  Effect of contact doping in superlattice-based minority carrier unipolar detectors , 2011 .

[27]  Hooman Mohseni,et al.  High carrier lifetime InSb grown on GaAs substrates , 1997 .