Highly selective photoenhanced wet etching of GaN for defect investigation and device fabrication

[1]  I. Adesida,et al.  Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations , 1998 .

[2]  E. Hu,et al.  Dopant Selective Photoelectrochemical Etching of GaAs Homostructures , 1991 .

[3]  I. Adesida,et al.  Smooth n-type GaN surfaces by photoenhanced wet etching , 1998 .

[4]  L. Romano,et al.  Electronic and structural properties of GaN grown by hydride vapor phase epitaxy , 1996 .

[5]  Hadis Morkoç,et al.  Nitride Semiconductors and Devices , 1999 .

[6]  A. J. Howard,et al.  High density plasma etching of III–V nitrides , 1996 .

[7]  Hadis Morkoç,et al.  Reactive ion etching of GaN using BCl3 , 1994 .

[8]  A. Willner,et al.  The Laser‐Controlled Micrometer‐Scale Photoelectrochemical Etching of III–V Semiconductors , 1991 .

[9]  C. Y. Chen,et al.  Deep ultraviolet enhanced wet chemical etching of gallium nitride , 1998 .

[10]  Ilesanmi Adesida,et al.  Highly anisotropic photoenhanced wet etching of n-type GaN , 1997 .

[11]  E. Hu,et al.  Room‐temperature photoenhanced wet etching of GaN , 1996 .

[12]  Ilesanmi Adesida,et al.  Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching , 1999 .

[13]  Lester F. Eastman,et al.  Scattering of electrons at threading dislocations in GaN , 1998 .

[14]  R. J. Shul,et al.  GAN : PROCESSING, DEFECTS, AND DEVICES , 1999 .

[15]  L. Romano,et al.  Structure of GaN films grown by hydride vapor phase epitaxy , 1997 .

[16]  S. Pearton,et al.  Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides , 1996 .