Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

[1]  Oliver Ambacher,et al.  Growth and applications of Group III-nitrides , 1998 .

[2]  Fan-Hsiu Huang,et al.  DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths , 2010 .

[3]  Umesh K. Mishra,et al.  GaN-Based RF Power Devices and Amplifiers , 2008, Proceedings of the IEEE.

[4]  Ilesanmi Adesida,et al.  Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation , 2008 .

[5]  Mark J. W. Rodwell,et al.  High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology , 2003 .

[6]  S. Keller,et al.  High-power AlGaN/GaN HEMTs for Ka-band applications , 2005, IEEE Electron Device Letters.

[7]  S. Keller,et al.  High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates , 2006, IEEE Electron Device Letters.

[8]  Dong Min Kang,et al.  Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate , 2014 .

[9]  Y. Okamoto,et al.  High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate , 2004, IEEE Transactions on Electron Devices.

[10]  Liu Xinyu,et al.  Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application , 2012 .

[11]  S. Keller,et al.  High breakdown GaN HEMT with overlapping gate structure , 2000, IEEE Electron Device Letters.

[12]  Young-Jin Kim,et al.  Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT. , 2014, Journal of nanoscience and nanotechnology.

[13]  T. Nakayama,et al.  Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate , 2004, IEEE Transactions on Microwave Theory and Techniques.

[14]  M. Baelmans,et al.  Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs , 2015, IEEE Transactions on Electron Devices.

[15]  J. Wurfl,et al.  Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement , 2008, IEEE Transactions on Electron Devices.

[16]  U. Mishra,et al.  The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .

[17]  Yutaka Ohno,et al.  Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors , 2004 .

[18]  J. Li,et al.  High breakdown voltage GaN HFET with field plate , 2001 .

[19]  V. Camarchia,et al.  Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation , 2007, IEEE Transactions on Microwave Theory and Techniques.

[20]  Jae-Kyoung Mun,et al.  Effects of a recessed camel-gate head structure on normally-off ALGaN/GaN HEMTs , 2013 .

[21]  H. Sakaki,et al.  Roles of low field mobility and its carrier-concentration dependences in high electron mobility transistors and other field effect transistors , 1988, IEEE Electron Device Letters.

[22]  Subhasis Haldar,et al.  Polarization dependent analysis of AlGaN/GaN HEMT for high power applications , 2007 .

[23]  S. Selberherr.  MOS device modeling at 77 K , 1989 .

[24]  S. Keller,et al.  AlGaN/GaN high electron mobility transistors with InGaN back-barriers , 2006, IEEE Electron Device Letters.

[25]  J Derluyn,et al.  Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs , 2010, IEEE Transactions on Electron Devices.

[26]  Sejun Hong,et al.  DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure. , 2015, Journal of nanoscience and nanotechnology.

[27]  Y.-F. Wu,et al.  GaN microwave electronics , 1997, 1997 Topical Symposium on Millimeter Waves. Proceedings (Cat. No.97TH8274).

[28]  Giovanni Ghione,et al.  Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries , 2001 .

[29]  U. Mishra,et al.  AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.

[30]  D. Ducatteau,et al.  Punch-through in short-channel AlGaN/GaN HFETs , 2006, IEEE Transactions on Electron Devices.

[31]  Mohsen Asad,et al.  Stopped depletion region extension in an AlGaN/GaN-HEMT: A new technique for improving high-frequency performance , 2015 .

[32]  T. Oka,et al.  AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications , 2008, IEEE Electron Device Letters.

[33]  Jae-Gil Lee,et al.  State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates , 2012 .

[34]  Hyun-Seok Kim,et al.  Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance. , 2014, Journal of nanoscience and nanotechnology.

[35]  Hyeon-Tak Kwak,et al.  Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure. , 2018, Journal of nanoscience and nanotechnology.