论文信息 - Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETs

Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETs

Fully ion-implanted n/sup +/ self-aligned GaAs MESFETs with Au/WSiN refractory metal gates have been fabricated by adopting neutral buried p-layers formed by 50-keV Be-implantation. S-parameter measurements and equivalent circuit fittings are discussed. When the Be dose is increased from 2*10/sup 12/ cm/sup -2/ to 4*10/sup 12/ cm/sup -2/, the maximum value of the cutoff frequency with a 0.2- mu m gate falls off from 108 to 78 GHz. This is because a neutral buried player makes the intrinsic gate-source capacitance increase markedly, while its influence on gate-drain capacitance and gate-source fringing capacitance is negligible. The maximum oscillation frequency recovers, however, due primarily to the drain conductance suppression by the higher-concentration buried p-layer. An equivalent value of over 130 GHz has been obtained for both 0.2- mu m-gate GaAs MESFETs. >

M. Tomizawa | Masami Tokumitsu | K. Onodera | Kazuyoshi Asai

[1] Masahiro Hirayama,et al. Invited Paper GaAs Self-Aligned MESFET Technologies , 1987, Other Conferences.

[2] Hiroshi Ishiwara,et al. Theoretical Considerations on Lateral Spread of Implanted Ions , 1972 .

[3] Y. Matsuoka,et al. Reactively sputtered WSiN film suppresses As and Ga outdiffusion , 1988 .

[4] K. Yamasaki,et al. Below 10 ps/gate operation with buried p-layer SAINT FETs , 1984 .

[5] K. Yamasaki,et al. EB-Writing n+self-aligned GaAs MESFETs for high-speed LSIs , 1982, 1982 International Electron Devices Meeting.

[6] K. Yamasaki,et al. Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate length , 1985, IEEE Transactions on Electron Devices.

[7] S. Sugitani,et al. Characterization of a thin Si‐implanted and rapid thermal annealed n‐GaAs layer , 1987 .

[8] H. Yamazaki. Ion implantation for GaAs IC fabrication , 1989 .