论文信息 - Effects of the HEMT parameters on the operation frequency of resonant tunneling logic gate MOBILE

Effects of the HEMT parameters on the operation frequency of resonant tunneling logic gate MOBILE

A MOBILE is a high-speed logic gate exploiting the negative differential resistance of resonant tunneling diodes (RTDs). It consists of two serially connected RTDs and HEMTs, connected to the RTD(s) in parallel. Effects of various parameters should be considered to realize ultrahigh-speed operation of the MOBILE. In particular, the ratio of the gate width of the HEMTs to the RTD area is the most important parameter, and should be optimized. In this paper we discuss the effects of this parameter on the operation speed based on the results of the circuit simulation under practical conditions, and show that the small gate width is essential to high-speed operation. © 2002 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 85(10): 1–6, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.10055

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