A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications

A micropower CMOS, direct-conversion very low frequency (VLF) receiver is described for receiving low-level magnetic fields from resonant sensors. The single-chip, phase locked loop (PLL)-synthesized receiver covers a frequency range of 10-82 kHz and provides both analog and 9-b digital baseband I and Q outputs. Digital I and Q outputs are accumulated in a companion digital chip which provides baseband signal processing. Emphasis is plated on the receiver micropower RF preamplifier which uses a lateral bipolar input device because of the significant increase in flicker noise illustrated for PMOS devices in weak inversion. Lateral bipolar transistors are also utilized in the mixer and IF stages for low flicker noise and low dc offsets. Special attention is given to isolating the internal local oscillator signals from the low-level RF input (0.3 /spl mu/V noise floor in 300 Hz BW), and local oscillator feedthrough is indiscernible in the RF preamplifier output noise spectrum. The 100% duty-cycle receiver, intended for miniature, battery-operated wireless applications, operates approximately four months at 80 /spl mu/A from a 6-V, 220-mA-hr battery.

[1]  A. Abidi,et al.  Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures , 1994 .

[2]  T. Masuhara,et al.  Low 1/f noise design of Hi-CMOS devices , 1982, IEEE Transactions on Electron Devices.

[3]  Eric A. Vittoz,et al.  CMOS voltage references using lateral bipolar transistors , 1985 .

[4]  Pierre Jarron,et al.  Amplex, a low-noise, low-power analog CMOS signal processor for multi-element silicon particle detectors , 1990 .

[5]  Jean-Paul Bardyn,et al.  A very low-noise CMOS preamplifier for capacitive sensors , 1993 .

[6]  P. Gray,et al.  Design considerations for a high-performance 3-/spl mu/m CMOS analog standard-cell library , 1987 .

[7]  E. Vittoz MOS transistors operated in the lateral bipolar mode and their application in CMOS technology , 1983, IEEE Journal of Solid-State Circuits.

[8]  M.E. Casey,et al.  A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications , 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

[9]  W. T. Holman,et al.  A compact low noise operational amplifier for a 1.2 /spl mu/m digital CMOS technology , 1995 .

[10]  A. Abidi,et al.  A 50 dB variable gain amplifier using parasitic bipolar transistors in CMOS , 1989 .

[11]  A. van der Ziel,et al.  Excess high frequency noise and flicker noise in MOSFETs , 1979 .

[12]  Asad A. Abidi Direct-conversion radio transceivers for digital communications , 1995 .

[13]  Willy M. C. Sansen,et al.  Low-noise wide-band amplifiers in bipolar and CMOS technologies , 1990, The Kluwer international series in engineering and computer science.

[14]  David A. Johns,et al.  Analog Integrated Circuit Design , 1996 .