Dual random circuit breaker network model with equivalent thermal circuit network
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[1] W. E. Beadle,et al. Switching properties of thin Nio films , 1964 .
[2] S. O. Park,et al. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[3] M. Chan,et al. SOI flash memory scaling limit and design consideration based on 2-D analytical modeling , 2004, IEEE Transactions on Electron Devices.
[4] Jae Hyuck Jang,et al. Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors , 2008, 0802.3739.
[5] B. Kahng,et al. Random Circuit Breaker Network Model for Unipolar Resistance Switching , 2008 .
[6] Z. Wei,et al. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism , 2008, 2008 IEEE International Electron Devices Meeting.
[7] Frederick T. Chen,et al. Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[8] J. S. Lee,et al. Occurrence of both unipolar memory and threshold resistance switching in a NiO film. , 2008, Physical review letters.
[9] K. Hsieh,et al. Future challenges of flash memory technologies , 2009 .
[10] D. Ielmini,et al. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.
[11] Jung-Hyun Lee,et al. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.
[12] Hyunsang Hwang,et al. Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics , 2011, 2011 International Electron Devices Meeting.
[13] O. Richard,et al. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation , 2011, 2011 International Electron Devices Meeting.
[14] Kinam Kim,et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.
[15] Hsiang-Lan Lung,et al. A novel retention-enhanced structure and a reset transient model for energy-efficient electrochemical conducting bridge resistive memory , 2011, The 4th IEEE International NanoElectronics Conference.
[16] Byung-Gook Park,et al. Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure , 2012 .
[17] Keun-Ho Lee,et al. A unified model for unipolar resistive random access memory , 2012 .
[18] H. Wong,et al. Nanometer-Scale ${\rm HfO}_{x}$ RRAM , 2013 .
[19] Hyungcheol Shin,et al. Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory , 2013, IEEE Electron Device Letters.