Design considerations for high-performance low-power silicon-on-insulator gate arrays

Silicon-on-insulator (SOI) provides capabilities for high-performance low-power ICs due to reduced capacitance. Significant differences between SOI and bulk technologies impact the design of gate arrays. The comparison of several microarchitectures for representative logic cells results in a variation of area or interconnect efficiency by up to 50 percent. Power supply noise introduced by switching currents is a severe problem in SOI, especially where low-power high-performance dynamic logic is employed. To reduce this, we propose a "charge tank" power supply structure, providing buffering capacitance close to the switching device.

[1]  Seiki Ogura,et al.  A new asymmetrical halo source GOLD drain (HS-GOLD) deep sub-half-micrometer n-MOSFET design for reliability and performance , 1989 .

[2]  J. Kernhof,et al.  New directions in semicustom arrays , 1988 .

[3]  Burton M. Leary,et al.  A 200 MHz 64 b dual-issue CMOS microprocessor , 1992, 1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[4]  J.-P. Colinge,et al.  An SOI voltage-controlled bipolar-MOS device , 1987, IEEE Transactions on Electron Devices.

[5]  J. M. Stern,et al.  Silicon-on-insulator (SOI): A High Performance ASIC Technology , 1992, 1992 Proceedings of the IEEE Custom Integrated Circuits Conference.

[6]  N. Rovedo,et al.  Asymmetrical halo source GOLD drain (HS-GOLD) deep sub-half micron n-MOSFET design for reliability and performance , 1989, International Technical Digest on Electron Devices Meeting.

[7]  Soha Hassoun,et al.  A 200-MHz 64-bit Dual-Issue CMOS Microprocessor , 1992, Digit. Tech. J..

[8]  Christer Svensson,et al.  Noise in digital dynamic CMOS circuits , 1994 .

[9]  P.K. Ko,et al.  Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFETs (MESFETs read MOSFETs) , 1993, IEEE Electron Device Letters.