Multi-finger MOSFET의 정확한 Scalable RF Model 개발

The improved RF model that finger number(Nf)-independent external source resistance is connected to a conventional BSIM3v3 model is developed to simulate nonlinear characteristics of Ids and S-parameters with respect to Nf for 0.13㎛ multi-finger MOSFET. The modeled Ids and S-parameters agree well with measured ones up to 20㎓, verifying the accuracy of the improved model.