论文信息 - Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature transport properties. We observe clear Coulomb oscillations in a SET fabricated in combination with direct growth of nanostructures and lithographically defined metal gates. The magnetic field dependence of the Coulomb oscillations as well as the Coulomb diamonds suggest strong carrier confinement in our QD.

[1] Tarucha,et al. The kondo effect in the unitary limit , 2000, Science.

[2] John R. Tucker,et al. Complementary digital logic based on the ``Coulomb blockade'' , 1992 .

[3] T. Fukui,et al. GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices , 2001 .

[4] K. Likharev. Single-electron transistors: Electrostatic analogs of the DC SQUIDS , 1987 .

[5] Weis,et al. Competing channels in single-electron tunneling through a quantum dot. , 1993, Physical review letters.

[6] T. Honda,et al. Shell Filling and Spin Effects in a Few Electron Quantum Dot. , 1996, Physical review letters.

[7] T. Fukui,et al. Self-formed quantum nano-structures by selective area MOVPE and their application to GaAs single electron devices , 2000 .

[8] K. Kumakura,et al. GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits , 1999 .

[9] T. Fukui,et al. Transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy , 1998 .

[10] K. Klitzing,et al. A quantum dot in the limit of strong coupling to reservoirs , 1998 .