A Compact, semi-physically based model predicts accurate aower and linearity of power InGaP HBTs

A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity simulations. In addition to self-heating, the model takes into account the non-quasi-static charge effects, which include collector mobile charge effects, collector transit time effects, and other dynamic charge effects. The new model, in contrast to conventional HBT models, predicts very well the large gain expansion at class AB operation and also the distortion, such as IP3, at various harmonic load conditions. The model is semi-physically based and, therefore, can be used to assess the effects of physical parameters on linearity, such as collector doping.

[1]  S. Bahl,et al.  An accurate, large signal, high frequency model for GaAs HBTs , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[2]  Bumman Kim,et al.  Intermodulation mechanism and linearization of AlGaAs/GaAs HBTs , 1997 .

[4]  Robert Anholt,et al.  Electrical and thermal characterization of MESFETs, HEMTs, and HBTs , 1994 .

[5]  Ce-Jun Wei,et al.  Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBTs , 1996 .

[6]  D. Floriot,et al.  A non-quasi-static model of GaInP/AlGaAs HBT for power applications , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.