Reactive-sputter-deposited TiN films on glass substrates

Abstract Sputter-deposited TiN thin films on glass substrate were investigated by X-ray diffraction analysis. The lattice parameter determined on the basis of (200) and (220) peaks is smaller than that determined on the basis of (111) peaks. A decrease in lattice parameter with increasing temperature was observed on annealing. The films exhibited preferred orientation. The tendency towards a specific preferred orientation is discussed on the basis of strain and surface energies. At low substrate temperatures and/or at small film thicknesses surface energy controls growth and a (100) preferred orientation is expected. At large film thicknesses and at high substrate temperatures the strain energy predominates and the (111) orientation is expected.

[1]  J. Greene,et al.  Residual compressive stress in sputter-deposited TiC films on steel substrates , 1981 .

[2]  Charles S. Barrett,et al.  The Structure of Metals , 1904, Nature.

[3]  B. Zega,et al.  Hard decorative TiN coatings by ion plating , 1977 .

[4]  F. Hauser,et al.  Deformation and Fracture Mechanics of Engineering Materials , 1976 .

[5]  J. Sundgren,et al.  Structure and properties of TiN coatings , 1985 .

[6]  B.-O. Johansson,et al.  Mechanisms of reactive sputtering of titanium nitride and titanium carbide II: Morphology and structure , 1983 .

[7]  J. Debuigne,et al.  The Ti-N system: Equilibrium between the δ, ϵ and α phases and the conditions of formation of the lobier and marcon metastable phase , 1987 .

[8]  Chris R. M. Grovenor,et al.  The development of grain structure during growth of metallic films , 1984 .

[9]  A. Perry.  Tempering effects in ion-plated TiN films: texture, residual stress, adhesion and colour , 1987 .

[10]  A. Perry,et al.  The stress in ion-plated HfN and TiN coatings , 1985 .

[11]  S. Kanamori.  Investigation of reactively sputtered TiN films for diffusion barriers , 1986 .

[12]  Y. Igasaki,et al.  The effects of substrate bias on the structural and electrical properties of TiN films prepared by reactive r.f. sputtering , 1980 .

[13]  J. Tardy,et al.  Influence of substrate bias on the composition, structure and electrical properties of reactively d.c.-sputtered TiN films , 1982 .

[14]  L. Król-Stȩpniewska,et al.  Properties of TiNxfilms reactively sputtered in an argon-nitrogen atmosphere , 1979 .

[15]  J. Chevallier,et al.  Microhardness of TiNx coatings obtained by reactive cathodic sputtering , 1981 .

[16]  Applications of TiN thin films in silicon device technology , 1982 .

[17]  L. Alexander,et al.  X-ray diffraction procedures , 1954 .

[18]  Y. S. Touloukian.  Thermophysical properties of matter , 1970 .

[19]  A. Perry,et al.  Structure of Titanium Nitride coatings deposited by physical vapour deposition: A unified structure model , 1988 .

[20]  J. Fuller,et al.  Structure and properties of sputtered titanium carbide and titanium nitride coatings , 1974 .

[21]  Kobayashi Mitsunori,et al.  TiN and TiC coating on cemented carbides by ion plating , 1978 .

[22]  J. Schoenes,et al.  Variations in the colour of group IV B nitride films , 1986 .

[23]  D. Rickerby,et al.  Correlation of process and system parameters with structure and properties of physically vapour- deposited hard coatings , 1988 .

[24]  H. Yoshihara,et al.  Enhanced ARE apparatus and TiN synthesis , 1979 .