Shallow donors in diamond : Be and Mg

[1]  K. Osuch,et al.  Ab initio study of lithium and sodium in diamond , 2007 .

[2]  R. Kalish,et al.  The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings , 2007 .

[3]  Jingbo Li,et al.  Possible approach to overcome the doping asymmetry in wideband gap semiconductors. , 2007, Physical review letters.

[4]  A. Nath,et al.  A comparative study on nanotextured high density Mg-doped and undoped GaN , 2007 .

[5]  P. Briddon,et al.  Theoretical study of Li and Na as n -type dopants for diamond , 2007 .

[6]  Titus V. Albu,et al.  The origin of shallow n-type conductivity in boron-doped diamond with H or S co-doping: Density functional theory study , 2006 .

[7]  S. Koizumi,et al.  n‐Type doping of diamond , 2006 .

[8]  S. Yamasaki,et al.  n-type doping of (001)-oriented single-crystalline diamond by phosphorus , 2005 .

[9]  S. Yamasaki,et al.  Growth of phosphorus-doped diamond using tertiarybutylphosphine and trimethylphosphine as dopant gases , 2005 .

[10]  Ying Dai,et al.  N -type electric conductivity of nitrogen-doped ultrananocrystalline diamond films , 2005 .

[11]  J. Butler,et al.  Conversion of p-type to n-type diamond by exposure to a deuterium plasma , 2004 .

[12]  K. Osuch,et al.  Interaction of hydrogen with boron, phosphorus, and sulfur in diamond , 2004 .

[13]  Xiaojun Hu,et al.  Co-doping of sulfur and boron in CVD-diamond , 2004 .

[14]  J. Butler,et al.  n-type diamond with high room temperature electrical conductivity by deuteration of boron doped diamond layers , 2004 .

[15]  N. Sakuma,et al.  Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes , 2004 .

[16]  Ying Dai,et al.  Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond , 2004 .

[17]  R. Jones,et al.  Shallow donors in diamond: chalcogens, pnictogens, and their hydrogen complexes. , 2004, Physical review letters.

[18]  J. Butler,et al.  Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers , 2003, Nature materials.

[19]  R. Nieminen,et al.  Calculated properties of point defects in Be-doped GaN , 2003 .

[20]  J. E. Lowther,et al.  Substitutional oxygen-nitrogen pair in diamond , 2003 .

[21]  K. Osuch,et al.  Ab initio study of the passivation and interaction of substitutional impurities with hydrogen in diamond , 2003 .

[22]  Matt Probert,et al.  First-principles simulation: ideas, illustrations and the CASTEP code , 2002 .

[23]  H. Okushi,et al.  Theoretical modeling of sulfur–hydrogen complexes in diamond , 2002 .

[24]  T. Uda,et al.  Shallow donor state due to nitrogen-hydrogen complex in diamond. , 2002, Physical review letters.

[25]  Joan Adler,et al.  Sulfur: A potential donor in diamond , 2000 .

[26]  H. Kanda,et al.  Phosphorus-doped chemical vapor deposition of diamond , 2000 .

[27]  J. Prins.  n-type semiconducting diamond by means of oxygen-ion implantation , 2000 .

[28]  R. Kalish,et al.  Is sulfur a donor in diamond , 2000 .

[29]  Hajime Haneda,et al.  Sulfur: A donor dopant for n-type diamond semiconductors , 1999 .

[30]  V. A. Dravin,et al.  Electrical and optical properties of light-emitting p–i–n diodes on diamond , 1998 .

[31]  A. Deneuville,et al.  Hydrogen-boron interactions in p-type diamond , 1998 .

[32]  V. Baranauskas,et al.  Measurement of the substitutional nitrogen activation energy in diamond films , 1998 .

[33]  M. Willander,et al.  Deactivation of Be acceptors by atomic hydrogen in AlGaAs/GaAs quantum well structures , 1997 .

[34]  Burke,et al.  Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.

[35]  W. Fahrner,et al.  Electrical properties of lithium-implanted layers on synthetic diamond , 1996 .

[36]  J. Freitas,et al.  Identification of phosphorus in diamond thin films using electron paramagnetic‐resonance spectroscopy , 1994 .

[37]  S. Prawer,et al.  Can n‐type doping of diamond be achieved by Li or Na ion implantation? , 1993 .

[38]  V. Anderson,et al.  n-type dopants and conduction-band electrons in diamond: Cluster molecular-orbital theory. , 1993, Physical review. B, Condensed matter.

[39]  Car,et al.  Nitrogen and potential n-type dopants in diamond. , 1991, Physical review letters.

[40]  H. Monkhorst,et al.  SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .

[41]  Cuixia Yan,et al.  Effects of hydrogen on electronic properties of doped diamond , 2005 .

[42]  Xiaojun Hu,et al.  Electrical and structural properties of boron and phosphorus co-doped diamond films , 2004 .