论文信息 - Characterization of Cu(In,Ga)Se2 films by Raman scattering

Characterization of Cu(In,Ga)Se2 films by Raman scattering

Abstract Raman spectra of CuIn 1− x Ga x Se 2 (0 x ≤0.29) thin films were measured at room temperature and low (∼10 K) temperature to examine the Raman active modes in the films for different x values. The variation of the most intense mode (A 1 mode) with frequency was studied and was compared with the theoretical plot. Although anion is not being substituted in the films (for different x ), its mass was found to influence the Raman shift in the system. Optical band gaps of Cu(In,Ga)Se 2 films were found to vary with x showing a bowing effect.

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