论文信息 - Integrated InP/GaInAs heterojunction bipolar photoreceiver

Integrated InP/GaInAs heterojunction bipolar photoreceiver

We report the first integrated photodetector-preamplifier circuit implemented with InP/GaInAs heterojunction bipolar transistors. The circuit consists of a three-terminal photo-transistor, three bipolar transistors and three resistors. A receiver sensitivity of −26 dBm at 100 Mbit/s has been achieved.

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