Cathodoluminescence of undoped and Zn-doped AlxGa1-xN epitaxial layers grown by Metalorganic Vapor Phase Epitaxy (MOVPE) in the composition range of 0≤x≤0.3 has been studied at room temperature. The dominant emission of undoped AlxGa1-xN grown at 1030°C is a near-band-edge emission (UV band), while that of Zn-doped AlxGa1-xN grown at 1030°C is a violet-blue one (VB band), and that of Zn-doped AlxGa1-xN grown at 910°C is a blue-green one (BG band). Each emission band shifts toward a higher-energy side with increasing x. The compositional dependence of the peak energy of the UV band is similar to that of the band gap energy. On the other hand, the compositional dependences of the VB band and BG band are somewhat smaller than that of the band gap energy.
[1]
H. Amano,et al.
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
,
1989
.
[2]
I. Akasaki,et al.
Effect of AlN Buffer Layer on AlGaN/α-Al2O3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy
,
1988
.
[3]
I. Akasaki,et al.
Edge emission of AlxGa1−xN
,
1986
.
[4]
H. Amano,et al.
Zn related electroluminescent properties in MOVPE grown GaN
,
1988
.
[5]
I. Akasaki,et al.
Behaviour of Zn as dopant in the photoluminescence of AlxGa1-xN
,
1986
.