Analysis of the insulated base MOS-controlled thyristor structure (IBMCT)

This paper analyzes the operation mode and the electrical characteristics of the insulated base MOS-controlled thyristor (IBMCT) by means of two-dimensional numerical simulations. The device has two gates, the ON-gate for arming the device on and the OFF-gate for turning it off, and a floating ohmic contact. Simulated device characteristics are reported and transient simulation results corroborate the ability of both turn-on and turn-off processes.