A three-terminal SOI gated varactor for RF applications

This paper presents a new CMOS compatible SOI gated varactor for use in RF ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploit the three-terminal property is also reported.

[1]  R. Weigel,et al.  A fully integrated VCO at 2 GHz , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[2]  S. Simon Wong,et al.  Analysis and optimization of accumulation-mode varactor for RF ICs , 1998, 1998 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.98CH36215).

[3]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[4]  Keith A. Jenkins,et al.  Integrated RF and microwave components in BiCMOS technology , 1996 .

[5]  Digh Hisamoto,et al.  Suspended SOI structure for advanced 0.1-/spl mu/m CMOS RF devices , 1998 .

[6]  Rinaldo Castello,et al.  A /spl plusmn/30% tuning range varactor compatible with future scaled technologies , 1998, 1998 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.98CH36215).