Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC

Electron paramagnetic resonance studies show that defects are activated in oxidized 3C-SiC and 6H-SiC by heat-treatments at temperatures greater than 800°C in dry (<1 ppm H2O) N2 or O2 ambients. Annealing in forming gas (7% H2, 93% N2) at 700°C completely passivates the centers induced by the dry heat-treatment. By contrasting the generation and annealing kinetics for these centers with the well studied Si dangling bond, we suggest that the centers in the oxidized SiC are C dangling bonds created by hydrogen effusion during the dry heat-treatment.

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