III-V MOSFETs for Future CMOS

In the last few years, as Si electronics faces mounting difficulties to maintain its historical scaling path, transistors based on III-V compound semiconductors have emerged as a credible alternative. To get to this point, fundamental technical problems had to be solved. Nevertheless, there are still many challenges that need to be addressed before the first non-Si CMOS technology becomes a reality. This paper reviews recent progress as well as challenges of III-V electronics for future logic applications.

[1]  J. Kwo,et al.  GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition , 2003, IEEE Electron Device Letters.

[2]  J. D. del Alamo,et al.  Vertical nanowire InGaAs MOSFETs fabricated by a top-down approach , 2013, 2013 IEEE International Electron Devices Meeting.

[3]  Lars-Erik Wernersson,et al.  III–V compound semiconductor transistors—from planar to nanowire structures , 2014 .

[4]  Dimitri A. Antoniadis,et al.  Novel intrinsic and extrinsic engineering for high-performance high-density self-aligned InGaAs MOSFETs: Precise channel thickness control and sub-40-nm metal contacts , 2014, 2014 IEEE International Electron Devices Meeting.

[5]  M. Rodwell,et al.  Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$ , 2014, IEEE Electron Device Letters.

[6]  C. Merckling,et al.  An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

[7]  B. Duriez,et al.  InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V) , 2013, 2013 IEEE International Electron Devices Meeting.

[8]  J. Alamo.  Nanometre-scale electronics with III–V compound semiconductors , 2011, Nature.

[9]  D-H Kim,et al.  InGaAs MOSFETs for CMOS: Recent advances in process technology , 2013, 2013 IEEE International Electron Devices Meeting.

[10]  High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 µS/µm at VDD = 0.5 V , 2014, 2014 IEEE International Electron Devices Meeting.

[11]  D. Antoniadis,et al.  Off-State Leakage Induced by Band-to-Band Tunneling and Floating-Body Bipolar Effect in InGaAs Quantum-Well MOSFETs , 2014, IEEE Electron Device Letters.

[12]  M. Rodwell,et al.  Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting I ON = 482 μA/μm at I OFF = 100 nA/μ ma ndV DD = 0. 5V , 2014 .