Creation and annealing of defect structures in silicon-based semiconductors during and after implantations at 77–500 K

[1]  M. Fanciulli,et al.  Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy , 2002 .

[2]  J. Keinonen,et al.  Amorphization mechanism and defect structures in ion-beam-amorphized Si, Ge, and GaAs , 2002 .

[3]  S. Goedecker,et al.  A fourfold coordinated point defect in silicon. , 2002, Physical review letters.

[4]  M. Fanciulli,et al.  57Fe Mössbauer study of radiation damage in ion-implanted Si, SiGe and SiSn , 2002 .

[5]  S. Öberg,et al.  Self-interstitial clusters in silicon , 2001 .

[6]  P. Ehrhart,et al.  Grazing incidence diffuse x-ray scattering investigation of the properties of irradiation-induced point defects in silicon , 2001 .

[7]  M. Jaraíz,et al.  Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si , 2001 .

[8]  U. Wahl.  Advances in electron emission channeling measurements in semiconductors , 2000 .

[9]  M. Fanciulli,et al.  The electronic configuration of substitutional Fe in silicon , 1999 .

[10]  Y. H. Lee,et al.  Silicon di-interstitial in ion-implanted silicon , 1998 .

[11]  M. Caturla,et al.  Defect production in collision cascades in elemental semiconductors and fcc metals , 1998 .

[12]  L. Colombo,et al.  FORMATION AND ANNIHILATION OF A BOND DEFECT IN SILICON : AN AB INITIO QUANTUM-MECHANICAL CHARACTERIZATION , 1998 .

[13]  Laubach,et al.  Diffusion and isomer shift of interstitial iron in silicon observed via in-beam Mössbauer spectroscopy. , 1990, Physical review letters.

[14]  M. Potter,et al.  Identification of substitutional and interstitial Co implanted in Si , 1987 .

[15]  L. M. Howe,et al.  Heavy ion damage in silicon and germanium , 1987 .

[16]  G. D. Watkins,et al.  DEFECTS IN IRRADIATED SILICON: ELECTRON PARAMAGNETIC RESONANCE OF THE DIVACANCY , 1965 .