Few-layer black phosphorus field-effect transistors with reduced current fluctuation.

We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-effect transistors resulting from Al2O3 passivation. In order to verify the effect of Al2O3 passivation on device characteristics, measurements and analyses were conducted on thermally annealed devices before and after the passivation. More specifically, static and low-frequency noise analyses were used in monitoring the charge transport characteristics in the devices. The carrier number fluctuation (CNF) model, which is related to the charge trapping/detrapping process near the interface between the channel and gate dielectric, was employed to describe the current fluctuation phenomena. Noise reduction due to the Al2O3 passivation was expressed in terms of the reduced interface trap density values D(it) and N(it), extracted from the subthreshold slope (SS) and the CNF model, respectively. The deviations between the interface trap density values extracted using the SS value and CNF model are elucidated in terms of the role of the Schottky barrier between the few-layer BP and metal contact. Furthermore, the preservation of the Al2O3-passivated few-layer BP flakes in ambient air for two months was confirmed by identical Raman spectra.

[1]  P. Ye,et al.  Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances , 2013, IEEE Electron Device Letters.

[2]  Graphene is not alone. , 2012, Nature nanotechnology.

[3]  Zhixian Zhou,et al.  Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate. , 2014, ACS nano.

[4]  John A. Rogers,et al.  Sources of Hysteresis in Carbon Nanotube Field‐Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures , 2012 .

[5]  Kenji Watanabe,et al.  Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates. , 2013, Nanoscale.

[6]  Xiaogan Liang,et al.  Multibit data storage states formed in plasma-treated MoS₂ transistors. , 2014, ACS nano.

[7]  Frank Schwierz,et al.  Graphene Transistors: Status, Prospects, and Problems , 2013, Proceedings of the IEEE.

[8]  Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device , 2008 .

[9]  Stefan Slesazeck,et al.  Reconfigurable silicon nanowire transistors. , 2012, Nano letters.

[10]  G. Steele,et al.  Isolation and characterization of few-layer black phosphorus , 2014, 1403.0499.

[11]  Jinhee Kim,et al.  Formation of low-resistance ohmic contacts between carbon nanotube and metal electrodes by a rapid thermal annealing method , 2000 .

[12]  Kinam Kim,et al.  High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.

[13]  J. Appenzeller,et al.  Screening and interlayer coupling in multilayer MoS2 , 2013 .

[14]  R. Wallace,et al.  The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. , 2014, Nano letters.

[15]  Jing Guo,et al.  Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. , 2013, Nano letters.

[16]  I. Lundström,et al.  Low frequency noise in MOS transistors—I Theory , 1968 .

[17]  J. Appenzeller,et al.  High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.

[18]  Bin Liu,et al.  Hysteresis in single-layer MoS2 field effect transistors. , 2012, ACS nano.

[19]  H. J. Choi,et al.  Separation of interlayer resistance in multilayer MoS2 field-effect transistors , 2014 .

[20]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[21]  Xiaohui Liu,et al.  Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2 , 2013 .

[22]  Mikael Östling,et al.  Low-Frequency Noise in Advanced MOS Devices , 2007 .

[23]  A. Balandin,et al.  Low-frequency 1/f noise in graphene devices. , 2013, Nature nanotechnology.

[24]  Wei Ji,et al.  High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus , 2014, Nature communications.

[25]  James Hone,et al.  Measurement of mobility in dual-gated MoS₂ transistors. , 2013, Nature nanotechnology.

[26]  Likai Li,et al.  Black phosphorus field-effect transistors. , 2014, Nature nanotechnology.

[27]  Kazuhito Tsukagoshi,et al.  Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits , 2014, Advanced materials.

[28]  C. Hierold,et al.  Long term investigations of carbon nanotube transistors encapsulated by atomic-layer-deposited Al2O3 for sensor applications , 2009, Nanotechnology.

[29]  Yihong Wu,et al.  Hysteresis of electronic transport in graphene transistors. , 2010, ACS nano.

[30]  Deepak Kumar Sharma,et al.  Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices , 2014, Nanotechnology.

[31]  P. Jarillo-Herrero,et al.  Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. , 2013, Nature nanotechnology.

[32]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.

[33]  Takhee Lee,et al.  Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors , 2013, Nanotechnology.

[34]  Min-Kyu Joo,et al.  A dual analyzer for real-time impedance and noise spectroscopy of nanoscale devices. , 2011, The Review of scientific instruments.

[35]  Yeonwoong Jung,et al.  Surface effects on electronic transport of 2D chalcogenide thin films and nanostructures , 2014, Nano Convergence.

[36]  Mengwei Si,et al.  The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights , 2014, IEEE Electron Device Letters.

[37]  Eui-Hyeok Yang,et al.  The influence of thermal annealing to remove polymeric residue on the electronic doping and morphological characteristics of graphene , 2013 .

[38]  L. T. Zhuravlev.  The surface chemistry of amorphous silica. Zhuravlev model , 2000 .

[39]  Zhixian Zhou,et al.  Polarized photocurrent response in black phosphorus field-effect transistors. , 2014, Nanoscale.

[40]  Kinam Kim,et al.  Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier , 2012, Science.

[41]  P. Hurley,et al.  Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates , 2010 .

[42]  Michael S. Fuhrer,et al.  High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects , 2012, 1212.6292.

[43]  M. Terrones,et al.  Photosensor Device Based on Few‐Layered WS2 Films , 2013 .

[44]  Siegmar Roth,et al.  Reduced contact resistance between an individual single-walled carbon nanotube and a metal electrode by a local point annealing , 2007 .

[45]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[46]  Jean-Paul Kleider,et al.  Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations , 1993 .

[47]  Yasuhiro Shimamoto,et al.  Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks , 2005 .

[48]  A. Javey,et al.  High-performance single layered WSe₂ p-FETs with chemically doped contacts. , 2012, Nano letters.

[49]  Qiang Li,et al.  Toward intrinsic graphene surfaces: a systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices. , 2011, Nano letters.

[50]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.

[51]  Lian Ji,et al.  Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping , 2013 .

[52]  A Kis,et al.  Reply to 'Measurement of mobility in dual-gated MoS₂ transistors'. , 2013, Nature nanotechnology.

[53]  D. Suh,et al.  Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors , 2014 .

[54]  A. Javey,et al.  Air-stable surface charge transfer doping of MoS₂ by benzyl viologen. , 2014, Journal of the American Chemical Society.

[55]  Xu Cui,et al.  Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. , 2013, ACS nano.

[56]  Hua Zhang,et al.  The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. , 2013, Nature chemistry.

[57]  Andre K. Geim,et al.  The rise of graphene. , 2007, Nature materials.

[58]  Lain-Jong Li,et al.  Large-Area Aiming Synthesis of WSe2 Monolayers , 2013, 1304.7365.

[59]  A. H. Castro Neto,et al.  Electric field effect in ultrathin black phosphorus , 2014 .

[60]  Joachim Knoch,et al.  Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors , 2007 .

[61]  Carl W. Magnuson,et al.  Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition. , 2012, ACS nano.

[62]  L. Zhen,et al.  Carrier control of MoS2 nanoflakes by functional self-assembled monolayers. , 2013, ACS nano.

[63]  A. Nasibulin,et al.  Atomic layer deposition of aluminum oxide films for carbon nanotube network transistor passivation. , 2011, Journal of nanoscience and nanotechnology.

[64]  A. Morita,et al.  Semiconducting black phosphorus , 1986 .

[65]  Lain‐Jong Li,et al.  Large-area synthesis of highly crystalline WSe(2) monolayers and device applications. , 2014, ACS nano.

[66]  Gérard Ghibaudo,et al.  Electrical noise and RTS fluctuations in advanced CMOS devices , 2002, Microelectron. Reliab..

[67]  Gerard Ghibaudo,et al.  Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .

[68]  S. Chang,et al.  Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements , 2014 .