Deposition of device quality, low H content amorphous silicon

Device‐quality hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device‐quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament. These low H content films show an Urbach edge width of 50 mV and a spin density of ∼1/100 as large as that of glow discharge films containing comparable amounts of H. High substrate temperatures, deposition in a high flux of atomic H, and lack of energetic particle bombardment are suggested as reasons for this behavior.

[1]  B. Wacker,et al.  Film Growth Mechanisms of Amorphous Silicon in Diode and Triode Glow Discharge Systems , 1987 .

[2]  B. G. Brooks,et al.  Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon , 1981 .

[3]  G. Lucovsky,et al.  Incorporation of polyhydride bonding groups into thin films of hydrogenated amrophous silicon (a-;Si:H) , 1989 .

[4]  D. Carlson.  Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cells , 1986 .

[5]  Myron Strongin,et al.  a‐Si : H produced by high‐temperature thermal decomposition of silane , 1979 .

[6]  H. Fritzsche,et al.  Hydrogen content and density of plasma‐deposited amorphous silicon‐hydrogen , 1979 .

[7]  S. Wagner,et al.  Surface States on a-Si:H,F Grown from SiF4 and H2 , 1989 .

[8]  Wagner,et al.  Band tails, entropy, and equilibrium defects in hydrogenated amorphous silicon. , 1987, Physical review letters.

[9]  I. Balberg,et al.  Self‐consistency and self‐sufficiency of the photocarrier grating technique , 1988 .

[10]  C. Wong,et al.  Bond Angle Disorder in Tetrahedrally Bonded Amorphous Silicon , 1986 .

[11]  Tsai,et al.  Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. , 1985, Physical review. B, Condensed matter.

[12]  M. Stutzmann.  The defect density in amorphous silicon , 1989 .

[13]  M. Kushner,et al.  Reduced Staebler-Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films , 1990 .

[14]  A. Gallagher,et al.  Plasma Chemistry in Silane and Silane-Germane Discharge Deposition , 1989 .

[15]  R. Crandall,et al.  Microstructure and the Urbach Edge in Glow Discharge Deposited a-SiC:H , 1988 .

[16]  B. A. Scott,et al.  Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor deposition , 1982 .

[17]  Y. Tsuo,et al.  Ion beam hydrogenation of amorphous silicon , 1987 .

[18]  R. Crandall,et al.  Small-angle X-ray scattering studies of microvoids in a-SiC:H and a-Si:H , 1989 .

[19]  Alan Gallagher,et al.  Production of high-quality amorphous silicon films by evaporative silane surface decomposition , 1988 .

[20]  H. Matsumura.  Study on catalytic chemical vapor deposition method to prepare hydrogenated amorphous silicon , 1989 .

[21]  W. Beyer,et al.  Bonding and Release of Hydrogen in a-Si:C:H Alloys , 1985 .

[22]  Arvind Shah,et al.  VHF-GD a-Si:H Films Prepared at Very Low Temperature , 1989 .