Radiation-induced donor generation in epitaxial and Cz diodes

[1]  G. Kramberger,et al.  Second-order generation of point defects in highly irradiated float zone silicon-annealing studies , 2003 .

[2]  I. Pintilie,et al.  Radiation hardness of silicon—a challenge for defect engineering , 2003 .

[3]  G. Kramberger,et al.  Superior radiation tolerance of thin epitaxial silicon detectors , 2003 .

[4]  I. Pintilie,et al.  Bulk damage effects in standard and oxygen-enriched silicon detectors induced by 60Co-gamma radiation , 2003 .

[5]  I. Pintilie,et al.  Results on defects induced by 60Co gamma irradiation in standard and oxygen-enriched silicon , 2003 .

[6]  V. V. Emtsev,et al.  Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450–650 °C under hydrostatic pressure , 2003 .

[7]  I. Pintilie,et al.  Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion” , 2003 .

[8]  R. Nieminen,et al.  Simulation of the kinetics of oxygen complexes in crystalline silicon , 2002 .

[9]  R. Nieminen,et al.  Local vibrations of thermal double donors in silicon , 2002 .

[10]  I. Pintilie,et al.  Close to midgap trapping level in 60Co gamma irradiated silicon detectors , 2002 .

[11]  R. Nieminen,et al.  Aggregation kinetics of thermal double donors in silicon. , 2001, Physical review letters.

[12]  L. Pintilie,et al.  Thermally stimulated current method applied on diodes with high concentration of deep trapping levels , 2001 .

[13]  B. MacEvoy,et al.  Defect kinetics in novel detector materials , 2000 .

[14]  B. Svensson,et al.  Kinetic study of oxygen dimer and thermal donor formation in silicon , 1998 .

[15]  S. Öberg,et al.  First stage of oxygen aggregation in silicon : the oxygen dimer , 1998 .

[16]  R. Nieminen,et al.  Spin-density study of the silicon divacancy , 1998 .

[17]  G. Gomila,et al.  Stochastic Resonance in Noisy Nondynamical Systems , 1997, cond-mat/9707141.

[18]  K. Gill,et al.  Bulk damage effects in irradiated silicon detectors due to clustered divacancies , 1997 .

[19]  K. Gill,et al.  DEFECT EVOLUTION IN IRRADIATED SILICON DETECTOR MATERIAL , 1996 .

[20]  P. Wagner,et al.  Thermal double donors in silicon , 1989 .

[21]  A. Oates,et al.  A model for radiation damage effects in carbon-doped crystalline silicon , 1987 .

[22]  A. Chantre.  Metastable thermal donor states in silicon , 1987 .

[23]  V. Markevich,et al.  Electrical and Optical Characterization of Thermal Donors in Silicon , 1986 .