论文信息 - High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector

High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector

The characteristics of quantum dot infrared photodetectors (QDIPs) in which InAs self-organised quantum dots are embedded in an AlAs/GaAs superlattice matrix are reported. An extremely large peak responsivity, R/sub p/=2.5 A/W, is measured at T=78K for V/sub bias/=-1.5 V. A dark current density as low as 3.2/spl times/10/sup -4/ A/cm/sup 2/ for V/sub bias/=-2.0 V is also measured at T=300K.

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