Submicron electro-optic measurement technique using an external hemispherical probe

In this paper an external electro-optic measuring system based on a hemispherical GaAs probe is presented. By using the system, the electrical signals propagating on a microstrip transmission line are successfully measured. The spatial resolution of the system, which is limited by the focused probing spot size, is about 0.5 micrometers , when the wavelength of the probing beam is 1.3 micrometers .