Extraction of Subgap Donor States in a-IGZO TFTs by Generation–Recombination Current Spectroscopy

A physics-based generation-recombination current (JG r) spectroscopy is proposed for the extraction of the sub gap donorlike density of states (DOS) of amorphous InGaZnO thin-film transistors. Physics-based Shockley-Read-Hall recombination through the subgap DOS over the bandgap is fully considered, and the potential for the carrier concentration is calculated through the DeAOTS model. The extracted parameters for the exponential deep donorlike states are N<sub>DD</sub> = 5.5 × 10<sup>21</sup> [cm<sup>-3</sup> · eV<sup>-1</sup>] and kT<sub>DD</sub> = 0.115 [eV].

[1]  Jang-Yeon Kwon,et al.  The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors , 2010 .

[2]  B. Ryu,et al.  O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors , 2010, 1006.4913.

[3]  U-In Chung,et al.  Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS) , 2010, IEEE Transactions on Electron Devices.

[4]  Dong Myong Kim,et al.  Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics , 2010, IEEE Electron Device Letters.

[5]  Z. Fan,et al.  Zinc oxide nanostructures: synthesis and properties. , 2005, Journal of nanoscience and nanotechnology.

[6]  Hideo Hosono,et al.  Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states , 2008 .

[7]  K. Takahashi,et al.  Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor , 2009, Journal of Display Technology.

[8]  Hideo Hosono,et al.  Trap densities in amorphous-InGaZnO4 thin-film transistors , 2008 .

[9]  Jang-Yeon Kwon,et al.  The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors , 2010 .

[10]  Sung-Min Yoon,et al.  Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor , 2010 .

[11]  J. Wager,et al.  Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors , 2009, IEEE Transactions on Electron Devices.

[12]  Jin Jang,et al.  Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer , 2010 .

[13]  Jerzy Kanicki,et al.  Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors , 2009 .

[14]  H. Ohta,et al.  Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4 , 2005 .

[15]  Y. Jeon,et al.  Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors , 2010, IEEE Electron Device Letters.

[16]  Hideo Hosono,et al.  Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy , 2008 .