Contact resistance Study of “edge-contacted” metal-graphene interfaces

The contact resistance RC of “edge-contacted” metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create “edge contacts”. The parameter space for different hole patterns in graphene is explored. The contact resistance is reduced from 1518 Ωμm for structures without holes to 456 Ωμm in structures with holes of 500 nm diameter everywhere under the contact. These values were achieved at the Dirac point, i.e. at the point of minimum carrier density in graphene and they correspond to a reduction of 70%. These results provide a clear path towards higher performance in graphene based electronic devices, which are often limited by unreliable and high RC.

[1]  V. Perebeinos,et al.  Double Contacts for Improved Performance of Graphene Transistors , 2012, IEEE Electron Device Letters.

[2]  Klaus Kern,et al.  Contact and edge effects in graphene devices. , 2008, Nature nanotechnology.

[3]  Bingyan Chen,et al.  Realization of low contact resistance close to theoretical limit in graphene transistors , 2015, Nano Research.

[4]  K. Nagashio,et al.  Intrinsic graphene/metal contact , 2012, 2012 International Electron Devices Meeting.

[5]  A. D. Smith,et al.  Chemical vapor deposited graphene: From synthesis to applications , 2014, 2103.14880.

[6]  C. Dimitrakopoulos,et al.  100 GHz Transistors from Wafer Scale Epitaxial Graphene , 2010, 1002.3845.

[7]  X. Duan,et al.  Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene , 2013, Nature Communications.

[8]  Hongkun Park,et al.  Gate-activated photoresponse in a graphene p-n junction. , 2010, Nano letters.

[9]  A. D. Smith,et al.  Electromechanical piezoresistive sensing in suspended graphene membranes. , 2013, Nano letters.

[10]  A. Morpurgo,et al.  Contact resistance in graphene-based devices , 2009, 0901.0485.

[11]  A. Fischer,et al.  Resistive graphene humidity sensors with rapid and direct electrical readout , 2015, Nanoscale.

[12]  Lianmao Peng,et al.  Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment , 2014 .

[13]  F. Schwierz,et al.  Two-dimensional materials for electronic applications , 2014 .

[14]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[15]  Y. Chabal,et al.  Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control. , 2012, ACS nano.

[16]  D. Jena,et al.  Broadband graphene terahertz modulators enabled by intraband transitions , 2012, Nature Communications.

[17]  J. Moon,et al.  Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates , 2009, IEEE Electron Device Letters.

[18]  裕幸 飯田,et al.  International Technology Roadmap for Semiconductors 2003の要求清浄度について - シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について - , 2004 .

[19]  F. Xia,et al.  Ultrafast graphene photodetector , 2009, CLEO/QELS: 2010 Laser Science to Photonic Applications.

[20]  William A. Goddard,et al.  Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum Mechanics , 2010 .

[21]  M. Batzill,et al.  Atomic and electronic structure of simple metal/graphene and complex metal/graphene/metal interfaces , 2012 .

[22]  F. Xia,et al.  The origins and limits of metal-graphene junction resistance. , 2011, Nature nanotechnology.

[23]  Max C. Lemme,et al.  Spectral sensitivity of graphene/silicon heterojunction photodetectors , 2015, 1509.01021.

[24]  K. Loh,et al.  Electrochemical delamination of CVD-grown graphene film: toward the recyclable use of copper catalyst. , 2011, ACS nano.

[25]  M. Lemme,et al.  Contact resistance study of various metal electrodes with CVD graphene , 2016, 2211.12415.

[26]  A. Toriumi,et al.  Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[27]  C. Dimitrakopoulos,et al.  Reducing contact resistance in graphene devices through contact area patterning. , 2013, ACS nano.

[28]  J. Kong,et al.  Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance , 2011, IEEE Electron Device Letters.

[29]  A. Toriumi,et al.  Contact resistivity and current flow path at metal/graphene contact , 2010 .

[30]  K. Nagashio,et al.  Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors , 2011 .

[31]  Stefan Wagner,et al.  Systematic comparison of metal contacts on CVD graphene , 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

[32]  D. K. Gaskill,et al.  High temperature measurements of metal contacts on epitaxial graphene , 2011 .

[33]  W. Yoo,et al.  Edge contacts of graphene formed by using a controlled plasma treatment. , 2015, Nanoscale.