Non-volatile memory device and program method thereof

PURPOSE: A non-volatile memory device and program method thereof are provided to reduce the threshold voltage distribution by reducing the error of the verification action. CONSTITUTION: The memory cell array(110) comprises memory cells. The row selection circuit(120) selects one the control circuit(170) in response to the row address of word lines. The row selection circuit drives the selected word line to the word line voltage. The column selecting circuit(130) selects the bit lines of the memory cell array in response to the column address as the prescribed unit. The voltage generating circuit(140) generates elimination and verification / normality reading, a plurality of word line voltages. The write / read circuit(150) is composed of the sense amplifier and write driver. The pass / fail verifying circuit(160) distinguish the program path / fail. According to the detected states of the memory cell, the control circuit controls the write driver.