论文信息 - Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects.

[1] E. Larkins,et al. Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys , 2001 .

[2] Seoung-Hwan Park. Spontaneous and piezoelectric polarization effects on linewidth enhancement factor of wurtzite InGaN/GaN quantum-well lasers , 2003 .

[3] B. Hahn,et al. First European GaN‐Based Violet Laser Diode , 2000 .

[4] Werner Wegscheider,et al. Degradation Analysis of InGaN Laser Diodes , 2002 .

[5] Charles H. Patterson,et al. Optical gain and linewidth enhancement factor in bulk GaN , 1999 .

[6] Paul Anthony Kirkby,et al. Observations of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operation , 1977 .

[7] J. Lin,et al. Mode spacing ``anomaly'' in InGaN blue lasers , 1999 .

[8] Hiroshi Amano,et al. Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers , 2001 .

[9] Calculation of quantum well laser gain spectra. , 1998, Optics express.

[10] B. W. Hakki,et al. cw degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain , 1973 .

[11] Isamu Akasaki,et al. Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers , 2000 .

[12] Alfred Lell,et al. Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures , 2002 .